Program
Invited speakers
- Hidekazu Tsuchida (CRIEPI Japan)
High resolution imaging of defects in 4H-SiC and defect reduction techniques
- Wlodek Strupinski (ITME Poland)
Graphene: Epitaxial vs exfoliated
- Shiro Tsukamoto (ANAN NCT Japan)
in-situ atomic-level 3D imaging of InAs quantum dot formation process on GaAs(001) during molecular beam epitaxy growth
- Sébastien Duguay (CNRS France)
Atom probe tomography and the analysis of semiconductors and insulators
- Anna Mogilatenko (FBH Germany)
Defect analysis in III-nitride layers using transmission electron microscopy
- Lutz Kirste (Fraunhofer IAF Germany)
Analysis of the Defect Structure of Freestanding GaN Substrates by X-Ray Diffraction Techniques
- Matthew Phillips (UTS Australia)
Radiative Deep Level Defects in Bulk and Nanostructured ZnO
- Robert Dwiliński (AMMONO Poland)
Bulk GaN substrates grown by ammonothermal method
High resolution imaging of defects in 4H-SiC and defect reduction techniques
Graphene: Epitaxial vs exfoliated
in-situ atomic-level 3D imaging of InAs quantum dot formation process on GaAs(001) during molecular beam epitaxy growth
Atom probe tomography and the analysis of semiconductors and insulators
Defect analysis in III-nitride layers using transmission electron microscopy
Analysis of the Defect Structure of Freestanding GaN Substrates by X-Ray Diffraction Techniques
Radiative Deep Level Defects in Bulk and Nanostructured ZnO
Bulk GaN substrates grown by ammonothermal method
Conference program
Download the conference program with the list of posters in .pdf format.
– invited talks | |||||||||||||||||
– contributed talks | |||||||||||||||||
– talks of sales representatives | |||||||||||||||||
Sunday, September 15, 2013 |
|||||||||||||||||
17:00 - | Welcome glass of wine | ||||||||||||||||
Monday, September 16, 2013 |
|||||||||||||||||
9:00 – 9:20 | Opening ceremony | ||||||||||||||||
9:20 – 10:00 | Sébastien Duguay (CNRS France) Atom probe tomography and the analysis of semiconductors and insulators |
||||||||||||||||
10:00 – 10:20 | Paul Montgomery (Icube) Parallel optical profilometry assisted conception of an opto-electronic illuminator using a VCSEL and diffractive optics |
||||||||||||||||
10:20 – 10:40 | Michael Mannsberger (Thermo Fisher Scientific) XPS Characterization of Organic and Inorganic Semiconductors |
||||||||||||||||
10:40 – 11:00 | coffee break | ||||||||||||||||
11:00 – 11:40 | Hidekazu Tsuchida (CRIEPI Japan) High Resolution Imaging and Discrimination of Extended Defects in 4H-SiC |
||||||||||||||||
11:40 – 12:00 | Tetsuo Hatakeyama (ADPERC, AIST) Deep-level transient Spectroscopy Characterization of Defects at the SiO2/4H-SiC Interface |
||||||||||||||||
12:00 – 12:20 | Kazuya Konishi (Mitsubishi Electric Corporation) Investigation of Stacking Fault Expansion from Basal Plane Dislocations within High Doped 4H-SiC Epilayers |
||||||||||||||||
12:20 – 12:40 | Koji Nakayama (Kansai Electric Power Co., Inc.) Observations of overlapped single Shockley stacking faults in 4H-SiC pin diode |
||||||||||||||||
13:00 – 14:00 | lunch | ||||||||||||||||
15:00 – 15:40 | Robert Dwiliński (AMMONO Poland) Bulk GaN substrates grown by ammonothermal method |
||||||||||||||||
15:40 – 16:00 | Dawid Kot (IHP GmbH) Development of a Storage Getter Test for Cu Contaminations in Silicon Wafers Based on ToF-SIMS Measurements |
||||||||||||||||
16:00 – 16:20 | Michio Tajima (ISAS/JAXA) Relation between deep-level photoluminescence and structure of small-angle grain boundaries in multicrystalline Si |
||||||||||||||||
16:20 – 16:40 | Gen Kato (ISAS/JAXA and Meiji University, Kawasaki) Photoluminescence Analysis of Oxygen Precipitation around Small-Angle Grain Boundaries in Multicrystalline Silicon Wafers |
||||||||||||||||
16:40 – 17:00 | Peng Dong (State Key Lab. of Silicon Mat., Zhejiang University) Correlation between copper precipitation and grown-in oxygen precipitates in 300 mm Czochralski Silicon wafer |
||||||||||||||||
17:00 – 17:20 | coffee break | ||||||||||||||||
19:00 - | ISC meeting | ||||||||||||||||
Tuesday, September 17, 2013 |
|||||||||||||||||
9:00 – 9:40 | Lutz Kirste (Fraunhofer Institute of Applied Solid State Physics) Analysis of the Defect Structure of Freestanding GaN Substrates by X-Ray Diffraction Techniques |
||||||||||||||||
9:40 – 10:00 | Maciej Matys (Silesian University of Technology) Characterization of donor-like states at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN structures |
||||||||||||||||
10:00 – 10:20 | Łucja Marona (Institute of High Pressure Physics PAS) Cathodoluminescence study on defects in partially strained InGaN quantum wells grown on semi-polar (20-21) GaN substrate |
||||||||||||||||
10:20 – 10:40 | Kunihiko Nakamura (Osaka University) Variation of local residual strain and twist angle in growth direction of AlN films on trench-patterned 6H-SiC substrates |
||||||||||||||||
10:40 – 11:00 | Bartosz Radkowski (LABSOFT) Modes of operation based on PeakForce Tapping technology in atomic force microscopes from Bruker |
||||||||||||||||
11:00 – 11:20 | coffee break | ||||||||||||||||
11:20 – 12:00 | Anna Mogilatenko (FBH Germany) Defect analysis in III-nitride layers using transmission electron microscopy |
||||||||||||||||
12:00 – 12:20 | Ute Zeimer (FBH Germany) The impact of the surface morphology of AlN/sapphire templates on the structural and optical properties of AlGaN⁄AlGaN multiple quantum wells |
||||||||||||||||
12:20 – 12:40 | Ewa Grzanka ((Institute of High Pressure Physics PAS) Structural and chemical characterization of the InGaN/GaN multi-quantum wells grown on different substrates using HR-XRD pattern and XPS |
||||||||||||||||
12:40 – 13:00 | Piotr Dumania (Institute of Electron Technology) SMART FRAME- empowering innovative business in Central Europe |
||||||||||||||||
13:00 – 14:00 | lunch | ||||||||||||||||
15:00 – 15:40 | Wlodek Strupinski (ITME Poland) Graphene: Epitaxial vs exfoliated |
||||||||||||||||
15:40 – 16:00 | Pawel Kaminski (Institute of Electronic Materials Technology) Transformations of deep-level defects in the semi-insulating 4H-SiC substrate induced by the growth of epitaxial graphene |
||||||||||||||||
16:00 – 16:20 | Sébastien Duguay (CNRS France) Electrical and physical characterization of AlGaN/GaN power HEMTs after thermal storage |
||||||||||||||||
16:20 – 16:40 | Martina Baeumler (Fraunhofer-Institut für Angewandte Festkörperphysik) Electroluminescence investigation of the lateral field distribution in AlGaN/GaN HEMTs for power applications |
||||||||||||||||
16:40 – 17:00 | coffee break | ||||||||||||||||
17:20 – 19:00 | poster session | ||||||||||||||||
Wednesday, September 18, 2013 |
|||||||||||||||||
8:30 – 13:30 | Excursion to Żelazowa Wola | ||||||||||||||||
13:00 – 14:30 | lunch | ||||||||||||||||
15:00 – 15:40 | Shiro Tsukamoto (ANAN NCT Japan) in-situ atomic-level 3D imaging of InAs quantum dot formation process on GaAs(001) during molecular beam epitaxy growth |
||||||||||||||||
15:40 – 16:00 | Cesare Frigeri (CNR-IMEM Institute) A structural characterization of GaAs MBE grown on Si pillars |
||||||||||||||||
16:00 – 16:20 | Paloma Tejedor (Instituto de Ciencia de Materiales de Madrid, CSIC) Surface self-organization and structure of highly doped n-InGaAs ultra-shallow junctions |
||||||||||||||||
16:20 – 16:40 | Juan Jiménez (University of Valladolid) Raman spectrum of SiGe NWs. Compositional and electromagnetic amplification aspects |
||||||||||||||||
16:40 – 17:00 | Jean-Pierre Landesman (University Rennes-1) Intermixing in InP-based quantum well photonic structures induced by the dry-etching process: a spectral imaging cathodoluminescence study |
||||||||||||||||
17:00 – 17:20 | coffee break | ||||||||||||||||
17:20 – 17:50 | Emilien Leonhardt (Hirox Ltd.) 3D Digital Microscope: HIROX KH-8700 Full HD Visual Inspection With 2D and 3D Measurement Easy, Fast, High Quality |
||||||||||||||||
19:00 – 22:00 | Conference dinner | ||||||||||||||||
Thursday, September 19, 2013 |
|||||||||||||||||
9:00 – 9:40 | Matthew Phillips (University of Technology, Sydney) Radiative Deep Level Defects in Bulk and Nanostructured ZnO |
||||||||||||||||
9:40 – 10:00 | Takashi Sekiguchi (National Institute for Materials Science) Focused Ion Beam Imaging of Defects in Si Materials for Photovoltaic and Semiconductor Use |
||||||||||||||||
10:00 – 10:20 | Yutaka Yoshida (Shizuoka Institute of Science and Technology) Fe mapping in mc-Si solar cell by Mössbauer spectroscopic microscope |
||||||||||||||||
10:20 – 10:40 | Mowafak Al-Jassim (NREL) Luminescent, structural and chemical properties of defects in MBE- and CSS-grown CdTe films for solar cell applications |
||||||||||||||||
10:40 – 11:00 | Jens Ohlmann (Fraunhofer ISE) Defect analysis of metamorphic buffer structures for III-V multi-junction solar cells |
||||||||||||||||
11:00 – 11:20 | coffee break | ||||||||||||||||
11:20 – 11:40 | Jens W. Tomm (Max-Born-Institut) Imaging of the degradation of 980 nm emitting single-spatial-mode lasers during ultrahigh power operation |
||||||||||||||||
11:40 – 12:00 | Martin Hempel (Max-Born-Institut) Temperature Kinetics during Catastrophic Optical Damage of Diode Laser |
||||||||||||||||
12:00 – 12:20 | Kamil Pierscinski (ITE) Evaluation of performance of mid-IR quantum cascade lasers by means of TR imaging |
||||||||||||||||
12:20 – 12:40 | Agata Bojarska (Institute of High Pressure Physics PAS) Cavity – free Optical Lasing in InGaN Heterostructures |
||||||||||||||||
12:40 – 13:00 | closing address | ||||||||||||||||
13:00 – 14:00 | lunch |
Posters
Noor Alhuda Al Saqri | Electrical characterization of defects using Deep Level Transient Spectroscopy (DLTS) technique in InGaAs quantum wires intermediate-band solar cells | |
Mohsin Aziz | Studies of interface related traps on Interfacial Misfit GaSb/GaAs heterostructures by Deep level transient spectroscopy (DLTS) and admittance spectroscopy Techniques. | |
Waseem Ahmed Bhutto | Observation and Control of Interfacial Defects by introducing coherent layer of ZnSe in Type II ZnO/ZnSe Coaxial Nanowires | |
Katsunori Danno | Solution Growth on 4H-SiC(1-100) for Lowering Density of Threading Dislocations | |
Alina Domanowska | In-depth profiles of element distribution at insulator/SiC interface from Auger electron spectromicroscopy | |
Piotr Edelman | Kelvin force microscopy characterization of corona charged dielectric surfaces | |
Cesare Frigeri | Effect of stress on defect transformation in B+ and Ag+ implanted HgCdTe/CdZnTe structure | |
Magdalena Garlińska | Theoretical studies of free-space optical systems applying quantum cascade laser | |
Dler Jameel | Defects study in PANI grown on normal and high index GaAs planes using Current-Voltage, Conductance and Deep Level Transient Spectroscopy | |
Yukako Kato | X-ray Topographic Study of Homoepitaxial Diamond Layer | |
Justyna Kubacka-Traczyk | High-resolution X-ray characterization of mid-IR Al0.45Ga0.55As/GaAs QCL structure | |
Oscar Martínez | Correlation between residual strain and electrically active defects in mc-Si solar cells | |
Raman study of multicrystalline Silicon wafers produced by the RST process | ||
Hideharu Matsuura | Electrical Behavior of Mg in Mg-Implanted 4H-SiC Layer | |
Filip Janiak | Influence of arsenic on the interface quality in type II InAs/Ga In(As)Sb quantum wells | |
Kei Nomura | Output estimation of concentrator photovoltaic using mappings of environmental factors and performance ratio | |
Dorota Pierscinska | CCD Thermoreflectance for thermal characterization of optoelectronic devices | |
Mariusz Płuska | Effect of secondary electroluminescence on cathodoluminescence and other luminescence measurements | |
Beata Rutecka | Application of explosive concentrators to QC laser absorption spectroscopy systems. | |
Iwona Sankowska | High resolution X-ray diffraction analysis of the InAlAs layers on InP substrates | |
Takashi Sekiguchi | Dislocation generation and propagation across the grain boundaries and seed interfaces in cast Si | |
Mariusz Sochacki | Investigation on the mechanisms of nitrogen shallow implantation influence on trap properties of SiO2/n-type 4H SiC interface | |
Lubica Stuchlikova | Deep Level Transient Spectroscopy Study of Pentacene Diode | |
Marek Suproniuk | Effect of deep-level defects on transient photoconductivity of semi-insulating 4H-SiC | |
Andrzej Taube | Fabrication and characterization of molybdenum disulfide monolayers | |
Dominika Urbańczyk | The study of heat transport in photonic periodic nanostructures using optical spectroscopy methods |