Program

Invited speakers

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Conference program

Download the conference program with the list of posters in .pdf format.



– invited talks






– contributed talks






– talks of sales representatives

Sunday, September 15, 2013


17:00 - Welcome glass of wine

Monday, September 16, 2013


9:00 – 9:20 Opening ceremony
9:20 – 10:00 Sébastien Duguay (CNRS France)
Atom probe tomography and the analysis of semiconductors and insulators

10:00 – 10:20 Paul Montgomery (Icube)
Parallel optical profilometry assisted conception of an opto-electronic illuminator using
a VCSEL and diffractive optics

10:20 – 10:40 Michael Mannsberger (Thermo Fisher Scientific)
XPS Characterization of Organic and Inorganic Semiconductors

10:40 – 11:00 coffee break
11:00 – 11:40 Hidekazu Tsuchida (CRIEPI Japan)
High Resolution Imaging and Discrimination of Extended Defects in 4H-SiC

11:40 – 12:00 Tetsuo Hatakeyama (ADPERC, AIST)
Deep-level transient Spectroscopy Characterization of Defects at the SiO2/4H-SiC Interface

12:00 – 12:20 Kazuya Konishi (Mitsubishi Electric Corporation)
Investigation of Stacking Fault Expansion from Basal Plane Dislocations within High Doped 4H-SiC Epilayers

12:20 – 12:40 Koji Nakayama (Kansai Electric Power Co., Inc.)
Observations of overlapped single Shockley stacking faults in 4H-SiC pin diode

13:00 – 14:00 lunch
15:00 – 15:40 Robert Dwiliński (AMMONO Poland)
Bulk GaN substrates grown by ammonothermal method

15:40 – 16:00 Dawid Kot (IHP GmbH)
Development of a Storage Getter Test for Cu Contaminations in Silicon Wafers Based on ToF-SIMS Measurements

16:00 – 16:20 Michio Tajima (ISAS/JAXA)
Relation between deep-level photoluminescence and structure of small-angle grain boundaries in multicrystalline Si

16:20 – 16:40 Gen Kato (ISAS/JAXA and Meiji University, Kawasaki)
Photoluminescence Analysis of Oxygen Precipitation around Small-Angle Grain Boundaries in Multicrystalline Silicon Wafers

16:40 – 17:00 Peng Dong (State Key Lab. of Silicon Mat., Zhejiang University)
Correlation between copper precipitation and grown-in oxygen precipitates in 300 mm Czochralski Silicon wafer

17:00 – 17:20 coffee break
19:00 - ISC meeting

Tuesday, September 17, 2013


9:00 – 9:40 Lutz Kirste (Fraunhofer Institute of Applied Solid State Physics)
Analysis of the Defect Structure of Freestanding GaN Substrates by X-Ray Diffraction Techniques

9:40 – 10:00 Maciej Matys (Silesian University of Technology)
Characterization of donor-like states at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN structures

10:00 – 10:20 Łucja Marona (Institute of High Pressure Physics PAS)
Cathodoluminescence study on defects in partially strained InGaN quantum wells grown on semi-polar (20-21) GaN substrate

10:20 – 10:40 Kunihiko Nakamura (Osaka University)
Variation of local residual strain and twist angle in growth direction of AlN films on trench-patterned 6H-SiC substrates

10:40 – 11:00 Bartosz Radkowski (LABSOFT)
Modes of operation based on PeakForce Tapping technology in atomic force microscopes from Bruker

11:00 – 11:20 coffee break
11:20 – 12:00 Anna Mogilatenko (FBH Germany)
Defect analysis in III-nitride layers using transmission electron microscopy

12:00 – 12:20 Ute Zeimer (FBH Germany)
The impact of the surface morphology of AlN/sapphire templates on the structural and optical properties of AlGaN⁄AlGaN multiple quantum wells

12:20 – 12:40 Ewa Grzanka ((Institute of High Pressure Physics PAS)
Structural and chemical characterization of the InGaN/GaN multi-quantum wells grown on different substrates using HR-XRD pattern and XPS

12:40 – 13:00 Piotr Dumania (Institute of Electron Technology)
SMART FRAME- empowering innovative business in Central Europe

13:00 – 14:00 lunch
15:00 – 15:40 Wlodek Strupinski (ITME Poland)
Graphene: Epitaxial vs exfoliated

15:40 – 16:00 Pawel Kaminski (Institute of Electronic Materials Technology)
Transformations of deep-level defects in the semi-insulating 4H-SiC substrate induced by the growth of epitaxial graphene

16:00 – 16:20 Sébastien Duguay (CNRS France)
Electrical and physical characterization of AlGaN/GaN power HEMTs after thermal storage

16:20 – 16:40 Martina Baeumler (Fraunhofer-Institut für Angewandte Festkörperphysik)
Electroluminescence investigation of the lateral field distribution in AlGaN/GaN HEMTs for power applications

16:40 – 17:00 coffee break
17:20 – 19:00 poster session

Wednesday, September 18, 2013


8:30 – 13:30 Excursion to Żelazowa Wola
13:00 – 14:30 lunch
15:00 – 15:40 Shiro Tsukamoto (ANAN NCT Japan)
in-situ atomic-level 3D imaging of InAs quantum dot formation process on GaAs(001) during molecular beam epitaxy growth

15:40 – 16:00 Cesare Frigeri (CNR-IMEM Institute)
A structural characterization of GaAs MBE grown on Si pillars

16:00 – 16:20 Paloma Tejedor (Instituto de Ciencia de Materiales de Madrid, CSIC)
Surface self-organization and structure of highly doped n-InGaAs ultra-shallow junctions

16:20 – 16:40 Juan Jiménez (University of Valladolid)
Raman spectrum of SiGe NWs. Compositional and electromagnetic amplification aspects

16:40 – 17:00 Jean-Pierre Landesman (University Rennes-1)
Intermixing in InP-based quantum well photonic structures induced by the dry-etching process: a spectral imaging cathodoluminescence study

17:00 – 17:20 coffee break
17:20 – 17:50 Emilien Leonhardt (Hirox Ltd.)
3D Digital Microscope: HIROX KH-8700 Full HD Visual Inspection With 2D and 3D Measurement Easy, Fast, High Quality

19:00 – 22:00 Conference dinner

Thursday, September 19, 2013


9:00 – 9:40 Matthew Phillips
(University of Technology, Sydney)
Radiative Deep Level Defects in Bulk and Nanostructured ZnO

9:40 – 10:00 Takashi Sekiguchi (National Institute for Materials Science)
Focused Ion Beam Imaging of Defects in Si Materials for Photovoltaic and Semiconductor Use

10:00 – 10:20 Yutaka Yoshida (Shizuoka Institute of Science and Technology)
Fe mapping in mc-Si solar cell by Mössbauer spectroscopic microscope

10:20 – 10:40 Mowafak Al-Jassim (NREL)
Luminescent, structural and chemical properties of defects in MBE- and CSS-grown CdTe films for solar cell applications

10:40 – 11:00 Jens Ohlmann (Fraunhofer ISE)
Defect analysis of metamorphic buffer structures for III-V multi-junction solar cells

11:00 – 11:20 coffee break
11:20 – 11:40 Jens W. Tomm (Max-Born-Institut)
Imaging of the degradation of 980 nm emitting single-spatial-mode lasers during ultrahigh power operation

11:40 – 12:00 Martin Hempel (Max-Born-Institut)
Temperature Kinetics during Catastrophic Optical Damage of Diode Laser

12:00 – 12:20 Kamil Pierscinski (ITE)
Evaluation of performance of mid-IR quantum cascade lasers by means of TR imaging

12:20 – 12:40 Agata Bojarska (Institute of High Pressure Physics PAS)
Cavity – free Optical Lasing in InGaN Heterostructures

12:40 – 13:00 closing address
13:00 – 14:00 lunch

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Posters


Noor Alhuda Al Saqri Electrical characterization of defects using Deep Level Transient Spectroscopy (DLTS) technique in InGaAs quantum wires intermediate-band solar cells

Mohsin Aziz Studies of interface related traps on Interfacial Misfit GaSb/GaAs heterostructures by Deep level transient spectroscopy (DLTS) and admittance spectroscopy Techniques.

Waseem Ahmed Bhutto Observation and Control of Interfacial Defects by introducing coherent layer of ZnSe in Type II ZnO/ZnSe Coaxial Nanowires

Katsunori Danno Solution Growth on 4H-SiC(1-100) for Lowering Density of Threading Dislocations

Alina Domanowska In-depth profiles of element distribution at insulator/SiC interface from Auger electron spectromicroscopy

Piotr Edelman Kelvin force microscopy characterization of corona charged dielectric surfaces

Cesare Frigeri Effect of stress on defect transformation in B+ and Ag+ implanted HgCdTe/CdZnTe structure

Magdalena Garlińska Theoretical studies of free-space optical systems applying quantum cascade laser

Dler Jameel Defects study in PANI grown on normal and high index GaAs planes using Current-Voltage, Conductance and Deep Level Transient Spectroscopy

Yukako Kato X-ray Topographic Study of Homoepitaxial Diamond Layer

Justyna Kubacka-Traczyk High-resolution X-ray characterization of mid-IR Al0.45Ga0.55As/GaAs QCL structure

Oscar Martínez Correlation between residual strain and electrically active defects in mc-Si solar cells
Raman study of multicrystalline Silicon wafers produced by the RST process

Hideharu Matsuura Electrical Behavior of Mg in Mg-Implanted 4H-SiC Layer

Filip Janiak Influence of arsenic on the interface quality in type II InAs/Ga In(As)Sb quantum wells

Kei Nomura Output estimation of concentrator photovoltaic using mappings of environmental factors and performance ratio

Dorota Pierscinska CCD Thermoreflectance for thermal characterization of optoelectronic devices

Mariusz Płuska Effect of secondary electroluminescence on cathodoluminescence and other luminescence measurements

Beata Rutecka Application of explosive concentrators to QC laser absorption spectroscopy systems.

Iwona Sankowska High resolution X-ray diffraction analysis of the InAlAs layers on InP substrates

Takashi Sekiguchi Dislocation generation and propagation across the grain boundaries and seed interfaces in cast Si

Mariusz Sochacki Investigation on the mechanisms of nitrogen shallow implantation influence on trap properties of SiO2/n-type 4H SiC interface

Lubica Stuchlikova Deep Level Transient Spectroscopy Study of Pentacene Diode

Marek Suproniuk Effect of deep-level defects on transient photoconductivity of semi-insulating 4H-SiC

Andrzej Taube Fabrication and characterization of molybdenum disulfide monolayers

Dominika Urbańczyk The study of heat transport in photonic periodic nanostructures using optical spectroscopy methods

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